My groupmates Patrick Berne, Dan Farkash, Ryan Donnelan, and I wrote a paper on the current usages and manufacturing of Gate-All-Around Field effect transistors. This was for the class Microelectronics Manufacturing at RPI, a class in which industry professionals from the company global foundries would give insight into the semiconductor manufacturing industry. (presentation)(research paper)

Overview of Project:

• GAAFET technology is a promising successor to the FINFET technologies as short channel effects can be mitigated with the use of separate sheets/ wires protruding into the gate itself.

• The major problem holding back the wide-scale fabrication of GAAFETs is the costs associated with its production.

  • Atomic Layer Etching is both costly and time consuming

  • More specialized metrology techniques such as Transmission Electron Microscopy must be used in order to create these devices.

• Lateral GAAFETs

  • Manufacturing is easier due to similarities with FinFETs

  • Less scalable when compared to Vertical GAAFETs

• Vertical GAAFETs

  • Difficult to manufacture, but much more scalable in the long term.